The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...